Scope:
This conference provides an opportunity for the presentation and discussion of the latest advances in modeling and simulation of semiconductor devices, processes, and equipments for integrated circuits.
Topics:
– Simulation and modeling based on continuum and/or particle methods for all sorts of devices including next generation CMOS devices, emerging memory devices, optoelectronic devices, lasers, TFTs, organic electronic devices, micro/nano sensors, power electronic devices and other semiconductor-based “green” devices, spintronics devices, tunnel FETs, SETs, carbon-based nanodevices, molecular devices, and bioelectronic devices.
– Fundamental aspects of device modeling and simulation such as quantum transport, fluctuation, noise, and reliability issues.
– All sorts of process simulations and modeling based on continuum and/or atomistic approaches, including the first-principles material design and growth simulation of nano-scale fabrication.
– Compact modeling for circuit simulation, including high frequency applications.
– Process/device/circuit simulation in context with system design and verification.
– Equipment, topography, lithography modeling and algorithms.
– Interconnect modeling and algorithm including noise and parasitic effects.
– Advanced numerical methods and algorithms including grid generation, user-interface, and visualization.
– High precision metrology for the modeling of semiconductor devices and processes.
Abstract Submission:
Authors should send a PDF file of a two-page abstract (A4 size or 22X28 cm) including figures and a reply form by e-mail. Detailed information including a reply form will be updated in the Second Call for Papers and the following web site in January, 2011.